Specialty Bump Services, Hi-Rel & Legacy Metallurgies

High-Pb Solder Bumps
95Pb/5Sn · 97Pb/3Sn Evaporated C4

At Nanosystems JP Inc., we fabricate high-lead solder bumps, 95Pb/5Sn and 97Pb/3Sn, by evaporation and lift-off: the original C4 flip-chip metallurgy, kept alive where decades of qualified fatigue and reliability data matter more than anything newer. For space, defense, and legacy-system programs operating under the applicable RoHS exemptions for high-melting-temperature solders. 4-12 inch wafers, from a single wafer.

Have full specs ready? Submit a detailed Technical RFQ →

95Pb/5Sn · ~310°C 97Pb/3Sn · ~320°C Evaporated C4 heritage Lift-off patterning Low-alpha Pb on request RoHS-exemption applications From 1 wafer
~310°C
95Pb/5Sn melting -
survives SnAg reflow below
C4
The original evaporated
flip-chip metallurgy
4-12″
Wafer sizes supported
modern resist lift-off
1
Wafer minimum -
rebuild & last-time-buy lots
Qualification Heritage

Why high-Pb survives

Mostly displaced by plated SnAg and RoHS, high-lead C4 persists where its fatigue behavior and alpha-emission characteristics are already qualified into flight and defense hardware, and re-qualifying anything else costs more than the parts. For new low-temperature designs, indium and AuSn are the modern companions on the same flow.

Indium Bump Services →
Structure Cross-Section
High-Pb C4 Bump on the Classic BLM
95Pb/5Sn C4 sphere · ~310°C device wafer Au Cu Cr-Cu Cr ball-limiting metallurgy (BLM) Al pad passivation Not to scale · the original evaporated C4 structure · Ti/Ni/Au available as the modern base
Why High-Pb
The original C4 bump,
still the qualified one

High-lead solder bumps were the first flip-chip interconnect, evaporated through shadow masks decades before plating took over. Three reasons keep them in production for a narrow, demanding customer base.

📜

Decades of Qualified Data

No bump metallurgy has a longer reliability record. Thermal-fatigue models, creep behavior, electromigration limits, and failure statistics for high-Pb C4 joints were established across decades of mainframe and hi-rel production, and that body of qualification is exactly what space and defense programs are certified against. Changing the metallurgy means re-qualifying the system; keeping it means sourcing the process, which is where we come in.

Longest reliability record Qualified fatigue models Certified systems keep it Process sourcing solved
🌡

High-Melt Hierarchy

Melting around 310-320°C, high-Pb joints stay solid through every SnAg reflow below them, serving as the first-level interconnect in multi-step assemblies the same way they did in the original C4 architecture. The soft, compliant lead matrix also absorbs thermal-cycling strain, the fatigue behavior those decades of data describe.

~310°C / ~320°C melting Survives SnAg reflow First-level interconnect Compliant, fatigue-modeled
🛰

Exemption-Space Applications

Solders containing 85% or more lead by weight fall under the long-standing RoHS exemption for high-melting-temperature solders, which is why the metallurgy remains legally available for the aerospace, defense, and industrial categories that need it. For radiation-sensitive electronics, low-alpha lead source material is available on request to control alpha-particle soft-error rates.

≥85% Pb exemption class Aerospace & defense use Low-alpha Pb on request Soft-error control
Alloys & Process
Evaporated the original way,
patterned the modern way

Historic C4 lines evaporated Pb and Sn through molybdenum shadow masks. We run the same physics through modern lift-off resist, stacked Pb/Sn layers evaporated to composition and lifted off, with photolithographic registration the shadow masks never had.

Alloy options
95Pb/5Sn and 97Pb/3Sn, on the classic BLM or modern UBM
Composition is set by layer thickness ratio. Under the bumps: the classic evaporated Cr / Cr-Cu / Cu / Au ball-limiting metallurgy for heritage-faithful builds, or Ti/Ni/Au for modern stacks.
95/5
Pb:Sn wt% · HIGH-Pb
Melting: ~310°C
The mainstream high-Pb C4 alloy: compliant, fatigue-modeled, and solid through downstream SnAg reflow. The default for rebuild and hi-rel flip-chip work.
97/3
Pb:Sn wt% · HIGHER-Pb
Melting: ~320°C
The higher-hierarchy variant where the assembly sequence or service temperature asks for extra margin above 95/5.
BLM
Cr / Cr-Cu / Cu / Au
Classic evaporated base
The original ball-limiting metallurgy under C4 bumps, evaporated and lifted off in the same flow for heritage-faithful reproduction; Ti/Ni/Au available as the modern alternative.
Low-α
LOW-ALPHA Pb SOURCE
On request
Low-alpha-emission lead source material for radiation-sensitive and memory-adjacent electronics, quoted per program with material certification.
Stacked Pb/Sn evaporation; composition by layer ratio
Lift-off patterning with stepper registration
Classic Cr / Cr-Cu / Cu / Au BLM or Ti/Ni/Au UBM beneath
Profilometry height map and SEM standard
Legacy process reproduction with documentation support
Handled under applicable RoHS exemptions; application category confirmed at RFQ
From 1 wafer, rebuild and last-time-buy lot sizes welcome
Full Process Flow
Litho to Flip-Chip Bond
1 · Resist coat on UBM-finished wafer 2 · Expose · develop undercut profile 3 · Evaporate full stack · one vacuum 4 · Lift-off resist + field metal gone 5 · Inspect sphere formation 6 · Flip-chip bond at your line or ours Not to scale · stacked Pb/Sn evaporated to composition · the shadow-mask C4 flow on modern resist
Process Specifications
Complete high-Pb bump
fabrication parameters
Parameter95Pb/5Sn97Pb/3Sn
Melting Range~310°C~320°C
Wafer Sizes4 inch (100mm), 6 inch (150mm), 8 inch (200mm), 12 inch (300mm)
DepositionStacked Pb/Sn evaporation; composition by layer thickness ratio
PatterningLift-off, stepper registration ±0.5µm
Bump Height3-10µm as deposited
Minimum Pitch~25µm typical (C4-class geometries)
Base MetallurgyCr / Cr-Cu / Cu / Au classic BLM, or Ti/Ni/Au
Composition VerificationLayer thickness ratio at deposition
Low-Alpha MaterialLow-alpha Pb source on request, with certification
Regulatory ScopeApplications under RoHS exemptions for solders ≥85% Pb; confirmed at RFQ
InspectionProfilometry + SEM standard; shear on request
Minimum LotFrom 1 wafer; rebuild and last-time-buy lots supported
Applications
High-Pb bumps across space,
defense, and legacy systems
🛰

Space Flight Electronics

Flip-chip interconnect for satellite and launch hardware qualified around high-Pb metallurgy, where the existing thermal-fatigue and vacuum heritage is the reason the alloy is specified, and re-qualification is the cost being avoided.

Satellite · Launch · Vacuum heritage · Qualified fatigue

Defense & Avionics Hi-Rel

High-reliability flip-chip and die attach for defense and avionics programs running under long-established qualification baselines, supplied with the process documentation those programs audit.

Defense · Avionics · Audit-ready documentation · Hi-rel
🔄

Legacy C4 Rebuild & Last-Time-Buy

When an original C4 source disappears, we reproduce the evaporated high-Pb process from your specifications, single wafers to bridge lots, keeping certified systems supplied without redesign.

Source replacement · Bridge lots · Spec-faithful · No redesign
🌡

High-Temperature Hierarchy

First-level joints that must stay solid through downstream SnAg assembly, the ~310-320°C melting range doing the same hierarchy job it did in the original C4 architecture.

First-level joint · Survives SnAg · Multi-step assembly

Radiation-Sensitive Assemblies

Low-alpha lead sourcing for electronics where alpha-particle soft errors matter, memory-adjacent die and instrumentation, delivered with material certification per program.

Low-alpha Pb · Soft-error control · Certified material
📚

Legacy Process Research

Single-wafer runs reproducing qualified legacy stacks for failure analysis, reliability studies, and heritage-process research, with modern metrology on a historical metallurgy.

Failure analysis · Reliability studies · From 1 wafer
Why Nanosystems JP Inc.
What makes our high-Pb capability
different
01

Evaporation is our native route

High-Pb C4 is an evaporated metallurgy, and evaporation with lift-off is the discipline our whole bump family runs on. No process translation, no plating compromise.

02

Heritage-faithful, modern registration

The classic Cr / Cr-Cu / Cu / Au BLM and stacked Pb/Sn evaporation, with stepper lithography in place of shadow masks, the original physics at modern accuracy.

03

Built for small, serious lots

Rebuild programs need one to a few wafers with full documentation, not volume commitments. From 1 wafer is our standard offer, not an exception.

04

Documentation programs can audit

Process specifications and inspection data packaged for hi-rel and defense review, the paperwork half of legacy reproduction.

05

Material sourcing handled

Standard and low-alpha lead source material quoted per program with certification, so the procurement problem arrives solved.

06

The whole ladder on one flow

High-Pb, AuSn, indium, gold, and UBM share lithography and evaporation, managed end to end by a dedicated project manager, so mixed-metallurgy programs stay in one place.

Related service

UBM Deposition: The Cr / Cr-Cu / Cu / Au and Ti/Ni/Au base metallurgies under these bumps, as a standalone service for solder you apply yourself.

UBM Deposition →

Start your project.
Response within 24 hours.

Share your process requirements, substrate, and production volume. A Nanosystems JP Inc. engineer will respond within 24 hours. Full quote typically within 7-10 business days, subject to project complexity and NDA requirements.

To speed up technical review, please include:
substrate type & size  ·  target process  ·  quantity  ·  timeline  ·  design files if available (not required for first review)
Not ready to share details? Request NDA first →

[email protected] · +81-3-5288-5569 · NDA available on request

Ready to discuss this process?
Technical review within 24 hours of inquiry. NDA available.
Request a Quote →
All Services
Full process flow →
Substrates
🔷 Substrate & WafersSi, SiC, GaN, glass, sapphire 🔬 Fused Silica WafersQuartz · borosilicate · low CTE 🟣 PI Film & SUS Sensor FabRoll-to-roll · sensor patterning
Front-End
🎭 Mask FabricationGDS to chrome mask, DRC 💡 PhotolithographyE-beam 20nm to 500×600mm 🔬 NanoimprintingUV & thermal NIL 🔵 Thin Film DepositionPVD, CVD, ALD, MBE ⬆️ LiftoffMetal pattern · shadow mask ⚡ ElectroplatingCu TSV fill, DPC, LIGA ⚗️ EtchingICP-RIE, DRIE >50:1 🌡️ AnnealingN₂/H₂/vacuum/RTA 🎯 Ion ImplantationB/P/As/Al/N implant 🔶 CMP & GrindingCu CMP, 50µm thinning ✂️ DicingBlade, stealth laser 🧪 Wafer CleaningRCA, plasma, megasonic
Advanced Packaging
🔗 Wafer BondingHybrid, eutectic, fusion 📌 TSV FabricationHigh AR, void-free Cu fill 🔓 TSV RevealBackgrind → etch → CMP 🪟 TGV FabricationThrough-glass via 📐 RDL FabricationBCB/PBO/PI + damascene 📦 Packaging & AssemblyWire bond, flip-chip 📚 3D/2.5D PackagingTSV+RDL+UBM+C4 🥇 AuSn BumpPVD lift-off, fluxless 🥈 Indium BumpEvap lift-off · cryo/quantum 🧱 UBM DepositionTi/Pt/Au · adhesion-barrier-Au 🪙 Gold BumpEvap & plated · Au-Au TC 🔥 AuGe / AuSi356/363°C eutectic die attach 🛰️ High-Pb Bumps95Pb5Sn · hi-rel C4 ⚗️ SLID / TLPCu/Sn · Au/In · Ag/In 🔒 Al-Ge Sealing424°C · CMOS-friendly MEMS ⚡ Ohmic ContactsGaAs · GaN · RTA + TLM 🧊 Cryo & UHV MetallizationAuSn · Ti/Pd/Au · seal rings 🪟 Optical AccessWindows · meshes · thru-holes 🫙 MEMS Vapor CellsDRIE + bond · unfilled bodies 💠 Thin-Film-on-InsulatorQuartz-on-Si · LNOI 🧬 Biochip & MicrofluidicsGlass 500×600mm, NIL 🔆 SiPho PackagingTSV·RDL·UBM·C4 for PIC
Industries
🤖 AI & HPC PackagingCoWoS-style, 2.5D/3D 💎 Silicon PhotonicsSOI · AuSn · TSV interposer ⚛️ Quantum TechnologyIon traps · vapor cells · TFOI 🚗 AutomotiveMEMS sensors, SiC power 🧬 Life SciencesLab-on-chip, biosensors 🔭 All Industries → Request a Quote →
Technical AI - Nanosystems JP Inc.
Online - typically replies in minutes
Services & Industries
⚙️ Capabilities Overview
Substrates
🔷 Substrate & WafersSi, SiC, GaN, glass, sapphire 🔬 Fused Silica WafersQuartz · borosilicate · low CTE 🟣 PI Film & SUS Sensor FabRoll-to-roll · sensor patterning
Front-End
🎭 Mask FabricationGDS to chrome mask, DRC 📷 PhotolithographyE-beam 20 nm to 500×600 mm 🔬 NanoimprintingUV & thermal NIL 🫧 Thin Film DepositionPVD, CVD, ALD, MBE 🖥 TFT & BackplaneIGZO · Glass · Display ⬆️ LiftoffMetal pattern · shadow mask ⚡ ElectroplatingCu TSV fill, DPC, LIGA 🌊 EtchingICP-RIE, DRIE >50:1 🔥 AnnealingN₂ / H₂ / vacuum / RTA ⚛️ Ion ImplantationB / P / As / Al / N implant 🔄 CMP & GrindingCu CMP, 50 µm thinning 💎 DicingBlade, stealth laser 🧪 Wafer CleaningRCA, plasma, megasonic
Advanced Packaging
🔗 Wafer BondingHybrid, eutectic, fusion 📌 TSV FabricationHigh AR, void-free Cu fill 👁️ TSV RevealBackgrind → etch → CMP 🪟 TGV FabricationThrough-glass via 🔀 RDL FabricationBCB / PBO / PI + damascene 📦 Packaging & AssemblyWire bond, flip-chip 📚 3D / 2.5D PackagingTSV + RDL + UBM + C4 🥇 AuSn BumpPVD lift-off, fluxless 🥈 Indium BumpEvap lift-off · cryo/quantum 🧱 UBM DepositionTi/Pt/Au · adhesion-barrier-Au 🪙 Gold BumpEvap & plated · Au-Au TC 🔥 AuGe / AuSi356/363°C eutectic die attach 🛰️ High-Pb Bumps95Pb5Sn · hi-rel C4 ⚗️ SLID / TLPCu/Sn · Au/In · Ag/In 🔒 Al-Ge Sealing424°C · CMOS-friendly MEMS ⚡ Ohmic ContactsGaAs · GaN · RTA + TLM 🧊 Cryo / UHV MetalAuSn · Ti/Pd/Au · rings 🪟 Optical AccessWindows · meshes · holes 🫙 Vapor CellsDRIE + bond · unfilled 💠 TFOI WafersQuartz-on-Si · LNOI 🧬 Biochip & MicrofluidicsGlass 500×600 mm, NIL 🔆 SiPho PackagingTSV · RDL · UBM · C4 for PIC
Industries
🤖 AI & HPC PackagingCoWoS-style, 2.5D / 3D 💡 Silicon PhotonicsSOI · AuSn · TSV interposer 🚗 AutomotiveMEMS sensors, SiC power 🧬 Life SciencesLab-on-chip, biosensors 🔭 All Industries → Request a Quote →